Finally, all electrical selleck screening library devices were fabricated through lithography and lift-off techniques. Besides, the Fourier transform infrared spectroscopy (FTIR) was used to analyze the chemical composition and bonding of the Zr:SiO2 thin films, and the entire electrical

measurements of devices with the Pt electrode were performed using Agilent B1500 semiconductor parameter analyzer (Santa Clara, CA, USA). Results and discussion To verify the porous SiO2 layer generated and formed, the FTIR spectra of the non-treated and treated C:SiO2 thin film prepared by the oxygen plasma treatment was compared and showed in Figure 1. It was clearly observed that the absorption of 10058-F4 chemical structure anti-symmetric stretch mode of Si-O-Si bonding was at 1,064 cm-1 in the non-treated and PF-01367338 mw treated C:SiO2 thin film by oxygen plasma treatment. In addition, the C = C bonding at 2,367 cm-1, C:SiO2 coupling OH bonding at 3,656 cm-1, C-O bonding, and C-C bonding from 1,250 to 1,740 cm-1 were found. This result implicated that the porous SiO2 thin film was formed by the chemical reaction between carbon and oxygen plasma treatment. Figure 1 Comparison of FTIR spectra of the C:SiO 2 thin film before and after oxygen

plasma treatment. The forming process for the compliance current of 1 μA was required to activate all of the single-layer Zr:SiO2 and bilayer Zr:SiO2/porous SiO2 thin film RRAM devices. For Zr:SiO2 RRAM devices, the sweeping voltage was applied on TiN electrode with the grounded Pt electrode. Figure 2 shows

the resistive switching characteristics of the single-layer Zr:SiO2 and the bilayer Zr:SiO2/porous SiO2 RRAM devices, respectively. The single-layer Zr:SiO2 and the bilayer Zr:SiO2/porous SiO2 RRAM device structure were also IKBKE shown in the inset of Figure 2. At the reading voltage of 0.1 V, the operation current of the LRS and HRS in Zr:SiO2 RRAM devices using the porous SiO2 buffer layer was smaller than that of others. A space electric field concentrated effect was testified to cause the operation current lowing of the RRAM devices using the porous SiO2 buffer layer. Figure 2 Current–voltage curves and the resistive switching characteristics of Zr:SiO 2 and bilayer Zr:SiO 2 /porous SiO 2 RRAM devices. The schematic configuration of the Zr:SiO2 RRAM and bilayer Zr:SiO2/porous SiO2 RRAM in the inset of the figure. In order to further discuss the resistive switching mechanism in single-layer Zr:SiO2 and bilayer Zr:SiO2/porous SiO2 RRAM devices, the conduction mechanism of current–voltage (I-V) curves in LRS and HRS were analyzed to discuss the carrier transport in the switching layer in Figures 3 and 4. The carrier transport of the LRS in Zr:SiO2 RRAM devices dominated by ohmic conduction mechanism is shown in the left inset of Figure 3. The result revealed that the conductive filament formed by the defect is induced by the zirconium atoms as the current flows through the Zr:SiO2 film.